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東海大學奈米科技研究中心-中心成員--龔正 教授
 

專長

半導體元件雜訊分析、可靠度分析、功率半導體元件設計與電子特性分析、功率積體電路設計、類比積體電路設計

計畫

供射頻應用之可縮放側向擴散金氧半場效電晶體設計(1/3)(國家科學委員會)(2011.08-2012.07)
低導通電阻高壓功率半導體元件研製(國家科學委員會)(2010.08 ~ 2011.07)
(98學年度)功率電晶體及其零電流開關控制電路研製(國家科學委員會)(2010.07-2011.02)
(98學年度)運用於FM解調的鎖相迴路設計(國家科學委員會)(2010.07-2011.02)
智慧型節能功率積體電路晶片組---先進高功率積體電路半導體元件研製與相關元件之模型建立(國家科學委員會)(2009.08-2010.10)
(99學年度)超高壓(Ultra High Voltage)橫向絕緣閘雙極性半導體研究與探討Half-bridge IC/Flyback電路計畫(台積電)(2011.01 ~ 2011.12)
(98學年度)超高壓(Ultra High Voltage)橫向半導體元件研究與發展(台積電)(2010.01 ~ 2010.12)

期刊

(16). Chih-Min Hu, Kuo-Hsuan Lo, Chung-Yu Hung, Chun-Hsueh Chu, a-Chiang Chang, Jih-Hsin Liu, Jeng Gong* and Chih-Fang Huang, The parameter extraction including field-plate effect of 0.25 μm 12 V LDMOSFETs, Semiconductor Science and Technology, Vol. 27, 015017, 2015.(SCI)
(15). Chen-Liang Chu, Chih-Min Hu, Chung-Yu Hung, Jeng Gong, Chih-Fang Huang, Fei-Yun Chen, Ruey-Hsin Liou, and Hsiao-Chin Tuan, The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs, IEEE Transactions on Electron Devices, 59, 4, pp1149-1154, 2011.(SCI)
(14). C.-L. Chu, C.-M. Hu, J. Gong, C.-F. Huang, C.-L. Tsai, F.-Y. Chen, R.-H. Liou, and H.-C. Tuan, Investigation of voltage-dependent drift region resistance on high-voltage drain-extended MOSFETs’ I-V characteristics, Electronics Letters, 48, 2, 2011.(SCI)
(13). Chih-Min Hu, Kuo-Hsuan Lo, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Jih-Hsin Liu, Jeng Gong, and Chih-Fang Huang, The parameter extraction including field plate effect of 0.25um 12V LDMOSFETs, Semiconductor Science and Technology, 2011.(SCI)
(12). Wen-Shan Lee, Cheng-Wei Lin, Ming-Hsien Yang, Chih-Fang Huang, Jeng Gong, and Zhao Feng, Demonstration of 3500-V 4H-SiC Lateral MOSFETs, IEEE ELECTRON DEVICE LETTERS, 32, 3, pp360-362, 2010.(SCI)
(11). Chih-Min Hu, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Chih-Fang Huang, Jeng Gong and Ching-Yu Chen, Design of an RF Transmit/Receive Switch Using LDMOSFETs with High Power Capability and Low Insertion Loss, IEEE TRANSACTIONS ON ELECTRON DEVICES, 58, 6, pp1722-1727, 2010.(SCI)
(10). Ching-Yuan Ho, Y. F. Chen, C. W. Ho, Wei. Chang, S. W. Chou, and J. Gong, Retention Behavior Using SiN Spacers Charging on nMOSFETs for Future Nonvolatile Memory Application, Journal of The Electrochemical Society, 158, 5, ppH536-H539, 2010.(SCI)
(9). Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Chia-Tien Lee, High-Performance 1-μm GaN n-MOSFET With MgO/MgO–TiO2 Stacked Gate Dielectrics, IEEE ELECTRON DEVICE LETTERS, 32, 3, pp306-308, 2010.(SCI)
(8). Tang-Jung Chiu, Jeng Gong, Ya-Chin King, Chih-Cheng Lu, and Hsin Chen, An Octagonal Dual-Gate Transistor With Enhanced and Adaptable Low-Frequency Noise, IEEE ELECTRON DEVICE LETTERS, 32, 1, pp9-11, 2010.(SCI)
(7). Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Bo-Heng Liou, Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments, IEEE ELECTRON DEVICE LETTERS, Vol. 96, No.9, pp989-1003, 2009.(SCI)
(6). Yuan-Feng Chen, Jeng Gong, Wei-Jen Tung, Shang-Wei Chou, and Erik S. Jeng, Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 56, No.9, 2009.(SCI)
(5). Yih-Hsia Lin, Chun-Hsueh Chu, Da-Chiang Chang, Jeng Gong and Ying-Zong Juang, Design of CMOS T/R Switch Using High Substrate Isolation and RF Floated Body for 1.9-GHz Applications, Microwave and Optical Technology Letters, Vol. 51, pp2145-2149, 2008.(SCI)
(4). K.T. Lee, Y.C. Lee, J.Y. Chang and J. Gong, Improvement on Optical Properties of GaN Light-emitting Diode with Mesh-textured Sapphire Back Delineated by Laser Scriber, IEEE Photonics Technology Letters, Vol. 21, No.7, pp477-479, 2008.(SCI)
(3). R.Y. Su, P.Y. Chiang, J. Gong, T.Y. Huang, C.L. Tsai, C.C. Chou and C.M. Liu, Experimental results of On-state Resistance Reduction by STI Fingers in LDMOSFET, IEEE Electron Device Letters, Vol. 30, No.2, pp192-194, 2008.(SCI)
(2). S.P. Yeh, C.H. Shih, J.Gong and C. Lien, Latent Noise in Schottky Barrier MOSFETs, 2008 5th International Conference on Unsolved Problems on Noise and Fluctuations in Physics, pp1036-1047, 2008.(SCI)
(1). R.Y. Su, P.Y. Chiang, J. Gong, T.Y. Huang, C.L. Tsai, C.C. Chou and C.M. Liu, Investigation on the Initial Hot Carrier in Jection in P-LDMOS Transistors with Shallow Trench Isolation Structure, IEEE Transactions on Electron Devices, Vol. 55, No.12, pp3569-3574, 2008.(SCI)

 

專長

半導體元件雜訊分析、可靠度分析、功率半導體元件設計與電子特性分析、功率積體電路設計、類比積體電路設計

計畫

供射頻應用之可縮放側向擴散金氧半場效電晶體設計(1/3)(國家科學委員會)(2011.08-2012.07)
低導通電阻高壓功率半導體元件研製(國家科學委員會)(2010.08 ~ 2011.07)
(98學年度)功率電晶體及其零電流開關控制電路研製(國家科學委員會)(2010.07-2011.02)
(98學年度)運用於FM解調的鎖相迴路設計(國家科學委員會)(2010.07-2011.02)
智慧型節能功率積體電路晶片組---先進高功率積體電路半導體元件研製與相關元件之模型建立(國家科學委員會)(2009.08-2010.10)
(99學年度)超高壓(Ultra High Voltage)橫向絕緣閘雙極性半導體研究與探討Half-bridge IC/Flyback電路計畫(台積電)(2011.01 ~ 2011.12)
(98學年度)超高壓(Ultra High Voltage)橫向半導體元件研究與發展(台積電)(2010.01 ~ 2010.12)

期刊

(16). Chih-Min Hu, Kuo-Hsuan Lo, Chung-Yu Hung, Chun-Hsueh Chu, a-Chiang Chang, Jih-Hsin Liu, Jeng Gong* and Chih-Fang Huang, The parameter extraction including field-plate effect of 0.25 μm 12 V LDMOSFETs, Semiconductor Science and Technology, Vol. 27, 015017, 2015.(SCI)
(15). Chen-Liang Chu, Chih-Min Hu, Chung-Yu Hung, Jeng Gong, Chih-Fang Huang, Fei-Yun Chen, Ruey-Hsin Liou, and Hsiao-Chin Tuan, The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs, IEEE Transactions on Electron Devices, 59, 4, pp1149-1154, 2011.(SCI)
(14). C.-L. Chu, C.-M. Hu, J. Gong, C.-F. Huang, C.-L. Tsai, F.-Y. Chen, R.-H. Liou, and H.-C. Tuan, Investigation of voltage-dependent drift region resistance on high-voltage drain-extended MOSFETs’ I-V characteristics, Electronics Letters, 48, 2, 2011.(SCI)
(13). Chih-Min Hu, Kuo-Hsuan Lo, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Jih-Hsin Liu, Jeng Gong, and Chih-Fang Huang, The parameter extraction including field plate effect of 0.25um 12V LDMOSFETs, Semiconductor Science and Technology, 2011.(SCI)
(12). Wen-Shan Lee, Cheng-Wei Lin, Ming-Hsien Yang, Chih-Fang Huang, Jeng Gong, and Zhao Feng, Demonstration of 3500-V 4H-SiC Lateral MOSFETs, IEEE ELECTRON DEVICE LETTERS, 32, 3, pp360-362, 2010.(SCI)
(11). Chih-Min Hu, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Chih-Fang Huang, Jeng Gong and Ching-Yu Chen, Design of an RF Transmit/Receive Switch Using LDMOSFETs with High Power Capability and Low Insertion Loss, IEEE TRANSACTIONS ON ELECTRON DEVICES, 58, 6, pp1722-1727, 2010.(SCI)
(10). Ching-Yuan Ho, Y. F. Chen, C. W. Ho, Wei. Chang, S. W. Chou, and J. Gong, Retention Behavior Using SiN Spacers Charging on nMOSFETs for Future Nonvolatile Memory Application, Journal of The Electrochemical Society, 158, 5, ppH536-H539, 2010.(SCI)
(9). Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Chia-Tien Lee, High-Performance 1-μm GaN n-MOSFET With MgO/MgO–TiO2 Stacked Gate Dielectrics, IEEE ELECTRON DEVICE LETTERS, 32, 3, pp306-308, 2010.(SCI)
(8). Tang-Jung Chiu, Jeng Gong, Ya-Chin King, Chih-Cheng Lu, and Hsin Chen, An Octagonal Dual-Gate Transistor With Enhanced and Adaptable Low-Frequency Noise, IEEE ELECTRON DEVICE LETTERS, 32, 1, pp9-11, 2010.(SCI)
(7). Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Bo-Heng Liou, Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments, IEEE ELECTRON DEVICE LETTERS, Vol. 96, No.9, pp989-1003, 2009.(SCI)
(6). Yuan-Feng Chen, Jeng Gong, Wei-Jen Tung, Shang-Wei Chou, and Erik S. Jeng, Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 56, No.9, 2009.(SCI)
(5). Yih-Hsia Lin, Chun-Hsueh Chu, Da-Chiang Chang, Jeng Gong and Ying-Zong Juang, Design of CMOS T/R Switch Using High Substrate Isolation and RF Floated Body for 1.9-GHz Applications, Microwave and Optical Technology Letters, Vol. 51, pp2145-2149, 2008.(SCI)
(4). K.T. Lee, Y.C. Lee, J.Y. Chang and J. Gong, Improvement on Optical Properties of GaN Light-emitting Diode with Mesh-textured Sapphire Back Delineated by Laser Scriber, IEEE Photonics Technology Letters, Vol. 21, No.7, pp477-479, 2008.(SCI)
(3). R.Y. Su, P.Y. Chiang, J. Gong, T.Y. Huang, C.L. Tsai, C.C. Chou and C.M. Liu, Experimental results of On-state Resistance Reduction by STI Fingers in LDMOSFET, IEEE Electron Device Letters, Vol. 30, No.2, pp192-194, 2008.(SCI)
(2). S.P. Yeh, C.H. Shih, J.Gong and C. Lien, Latent Noise in Schottky Barrier MOSFETs, 2008 5th International Conference on Unsolved Problems on Noise and Fluctuations in Physics, pp1036-1047, 2008.(SCI)
(1). R.Y. Su, P.Y. Chiang, J. Gong, T.Y. Huang, C.L. Tsai, C.C. Chou and C.M. Liu, Investigation on the Initial Hot Carrier in Jection in P-LDMOS Transistors with Shallow Trench Isolation Structure, IEEE Transactions on Electron Devices, Vol. 55, No.12, pp3569-3574, 2008.(SCI)